THE USAGE OF DIELECTRIC HIGH-MELTING OXIDES IN SENSORS FOR PRESSURE MEASUREMENT

Khoshev Aleksandr Vyacheslavovich, engineer of the microelectronics shop, Research Institute of Physical Measurements, Hoshev85@mail.ru
Popchenkov Dmitriy Valentinovich, head of division, Research Institute of Physical Measurements, Popchenkov79@mail.ru
Solov'eva Elena Mikhaylovna, engineer of the microelectronics shop, Research Institute of Physical Measurements, Ems_79@mail.ru

621.793.7

The research results of high-melting oxides usage for dielectric structures forming on sensing elements of thin-film piezoresistive pressure sensors have been given. It has been shown that the electron – beam sputtering method allows to form dielectric layers on the basis of high-melting oxides with the preset parameters.

sensing element, heterostructure, thin-film dielectric, insulation, temperature coefficient of linear expansion.